Characterization of MOCVD-Prepared CIS Solar Cells

نویسندگان

چکیده

Chalcopyrite Cu(In,Ga)Se2 (CIGS) solar cells prepared via metal-organic chemical vapor deposition (MOCVD) are one of the candidates for highly advanced photovoltaic devices. This is because their effectiveness and potential reducing production costs through large-scale production. However, research on MOCVD-prepared progressing slower than that other types cells, primarily preparation CuInSe2 (CIS)-based films MOCVD relatively more sophisticated. In this study, we analyzed CIS three-stage processed with simple precursors techniques. We achieved an energy-conversion efficiency 7.39% without applying a buffer layer. Instead, applied Cu-deficient layer to create buried pn junction. Ultimately, demonstrated fabrication fully-MOCVD-processed devices feasible.

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ژورنال

عنوان ژورنال: Energies

سال: 2021

ISSN: ['1996-1073']

DOI: https://doi.org/10.3390/en14227721